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IGBT Module-Size:LG 106.4 X WD 61.4 X HT 29 MM
The physical construction and packaging of multiple IGBT power semiconductor dies into a single package is known as an IGBT power module.
The physical construction and packaging of multiple IGBT power semiconductor dies into a single package is known as an IGBT power module.
* SIZE: LG 106.4 X WD 61.4 X HT 29 MM
* VCES(COLLECTOR-EMITTER VOLTAGE): 1200 V
* IC(CONTINUOUS DC COL LECTOR CURRENT): 450 A AT 100 DEG C AND 520A AT 25 DEG C
* ICRM(REPETITIVE PEAK COLLECTOR CURRENT): 900 A
* PTOT: 2400 W, EMITTER CONTROLLED DIODE
* CASE SIZE: 62 MM MA NUFACTURER : INFINEON/SEMIKRON OR ANY OTHER REPUTED MAKE MODEL : FF450R12KE4 OR EQUIVALENT MODEL
Consumer electronics, industrial technologies, the energy industry, aerospace electronics, and transportation all make extensive use of IGBTs. The IGBT combines the straightforward gate-drive properties of power MOSFETs with the capacity of bipolar transistors to operate at high currents and low saturation voltages.
Lorem Ipsum is simply dummy text of the printing and typesetting industry. Lorem Ipsum has been the industry's standard dummy text ever since the 1500s, when an unknown printer took a galley of type and scrambled it to make a type specimen book
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There is 1 item in your cart.
Total products: ₹123.72
Total shipping: ₹7.00
Taxes ₹0.00
Total: ₹130.72 (tax excl.)